| Application: | BMS |
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| Batch Number: | 2023+ |
| Manufacturing Technology: | Discrete Device |
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NCE offers N-Channel SGT-II series power MOSFETs with breakdown voltage ratings ranging from 30V to 120V. The ultra-low on-resistance ( RDS(on)) and ultra-low gate charge ( Qg ) features of the products, combined with advanced lightweight and compact packages, further increase the power density and energy conversion efficiency of the system. Meanwhile, for low-frequency applications with extremely demanding performance and robustness requirements, NCE N-channel SGT-II series products further optimize the high-current shutdown capability and electrostatic protection, which can satisfy a wide range of applications, including DC motor drive, Li-ion battery protection, and AC/DC synchronous rectification. In addition, compared with the previous generation of SGT-I series, SGT-II series features 20% lower on-resistance Ron ,sp and 20% lower FOM, which provides a better choice for designers to further improve system efficiency.
N-channel SGT-II series power MOSFET package range includes TO-220, TO-252, TO-247, TO-263, TO-251, TOLL, DFN5*6, DFN3*3, SOP-8 and other packages, providing designers with more flexible options for customization.
Note: SGT MOSFETs are also known as Super Trench MOSFETs.
| Package Marking and Ordering Information | ||||||||||
| Brand | Part Number | Device Package | SPQ | MoQ | ||||||
| NCE Power | NCEP038N10GU | DFN5X6-8L | 5000pcs/Reel | 5000pcs | ||||||
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