| Application: | BMS |
|---|---|
| Batch Number: | 2023+ |
| Manufacturing Technology: | Discrete Device |
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NCE offers N-channel SGT-I series power MOSFETs with breakdown voltage ratings ranging from 30V to 250V. NCE's level of technology and excellent quality management ensure outstanding product performance and reliability, providing cost-effective performance while reducing system design difficulties. They are widely used in synchronous rectification in switching mode power supplies (SMPS), DC motor control, solar micro inverters, telecom and server power supplies, and uninterruptible power supplies (UPS). For the power supply design field, designers are faced with the dual challenge of improving system efficiency and power density, while reducing system cost, NCE N-channel SGT-I series power MOSFET products with excellent on-resistance ( RDS (on)) and quality factor (FOM, RDS (on) ×Qg ) can be realized fast hard-switching, greatly enhancing the efficiency of the application, and become a perfect solution to this challenge. perfect solution to this challenge.
The package range of N-channel SGT-I series power MOSFETs includes TO-220, TO-252, TO-247, TO-263, TO-251, TOLL, DFN5*6, DFN3*3, and SOP-8 packages, which provide designers with more abundant and flexible options for customization.
Note: SGT MOSFETs are also known as Super Trench MOSFETs.
| Package Marking and Ordering Information | ||||||||||
| Brand | Part Number | Device Package | SPQ | MoQ | ||||||
| NCE Power | NCEP85T10G | DFN5X6-8L | 5000pcs/Reel | 5000pcs | ||||||
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